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FJBE2150D ? esbc? rated npn silicon transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJBE2150D rev. 1.0.0 1 march 2013 FJBE2150D esbc ? rated npn silicon transistor esbc features (fdc655 mosfet) ? low equivalent on resistance ? very fast switch: 150 khz ? squared rbsoa: up to 1250 v ? avalanche rated ? low driving capacitance, no miller capacitance typ. 12 pf capacitance at 200 v) ? low switching losses ? reliable hv switch: no false triggering due to high dv/dt transients applications ? high-voltage and high-speed power switches ? emitter-switched bipolar/mosfet cascode (esbc ? ) ? smart meters, smart breakers, hv industrial power supplies ? motor drivers and ignition drivers ordering information notes: 1. figure of merit. 2. other fairchild mosfets can be used in this esbc application. v cs(on) i c equiv. r cs(on) 0.131 v 0.5 a 0.261 (1) part number marking package packing method FJBE2150Dtu j2150d d2-pak-2l tube (1) (2) (3) b c e figure 2. internal schematic diagram c b g s fdc655 FJBE2150D figure 3. esbc configuration (2) figure 1. pin configuration 1.base 2.collector 3.emitter 1 d2-pak-2l 2 3 description the FJBE2150D is a low-cost, high-performance power switch designed to be used in an esbc ? configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. the power switch is designed to operate up to 1250 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses. the esbc ? switch is designed to be driven using off-the- shelf power supply contro llers or drivers. the esbc ? mosfet is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. the esbc ? configuration further minimizes the required driving power because it does not have miller capacitance. the FJBE2150D provides exceptional reliability and a large operating range due to its square reverse-bias- safe-operating-area (rbsoa) and rugged design. the device is avalanche rated and has no parasitic transis- tors, so is not prone to static dv/dt failures. the power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-volt- age hv-d2pak rated at 2500 v creepage and clearance.
FJBE2150D ? esbc? rated npn silicon transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJBE2150D rev. 1.0.0 2 absolute maximum ratings stresses exceeding the absolute maximu m ratings may damage the device. the de vice may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. thermal characteristics (3) values are at t a = 25c unless otherwise noted. note: 3. device mounted on fr-4 pcb, board size = 76 .2 mm x 114.3 mm, land pattern 12.70 mm x 9.45 mm, trace size = 10 mil. symbol parameter value units v cbo collector-base voltage 1250 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 12 v i c collector current 2 a i cp collector current (pulse) 3 a i b base current 1 a i bp base current (pulse) 2 a p d power dissipation (t c = 25 c) 110 w t j operating and junction temperature range - 55 to +125 c t stg storage temperature range - 65 to +150 c eas avalanche energy (t j = 25 c, 8 mh) 3.5 mj symbol parameter max. units r jc thermal resistance, junction to case 1.13 c/w r ja thermal resistance, junction to ambient 76.42 c/w
FJBE2150D ? esbc? rated npn silicon transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJBE2150D rev. 1.0.0 3 electrical characteristics (4) values are at t a = 25c unless otherwise noted . note: 4. pulse test: pulse width = 20 s, duty cycle ? 10%. symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = 0.5 ma, i e = 0 1250 1689 v bv ceo collector-emitter breakdown voltage i c = 5 ma, i b = 0 800 870 v bv ebo emitter-base breakdown voltage i e = 0.5 ma, i c = 0 12.0 14.8 v i ces collector cut-off current v ces = 1250 v, i e = 0 0.01 100 a i ceo collector cut-off current v ce = 800 v, v be = 0 0.01 100 a i ebo emitter cut-off current v eb = 12 v, i c = 0 0.05 500 a h fe dc current gain v ce = 3 v, i c = 0.4 a 20 29 35 v ce = 10 v, i c = 5 ma 20 43 v ce (sat) collector-emitter saturation voltage i c = 0.25 a, i b = 0.05 a 0.16 v i c = 0.5 a, i b = 0.167 a 0.12 v i c = 1 a, i b = 0.33 a 0.25 v v be (sat) base-emitter saturation voltage i c = 500 ma, i b = 50 ma 0.74 1.20 v i c = 2 a, i b = 0.4 a 0.85 1.20 v c ib input capacitance v eb = 10 v, i c = 0, f = 1 mhz 745 1000 pf c ob output capacitance v cb = 200 v, i e = 0, f = 1 mhz 15 pf f t current gain bandwidth product i c = 0.1 a, v ce = 10 v 5 mhz v f diode forward voltage i f = 0.4 a 0.76 1.20 v i f = 1 a 0.83 1.50 v
FJBE2150D ? esbc? rated npn silicon transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJBE2150D rev. 1.0.0 4 esbc configured electr ical characteristics (5) values are at t a = 25c unless otherwise noted. note: 5. used typical fdc655 mosfet values in table. va lues can vary if other fairchild mosfets are used. symbol parameter test condition min. typ. max. units f t current gain bandwidth product i c = 0.1 a,v ce = 10 v 25 mhz it f inductive current fall time v gs = 10 v, r g = 47 , v clamp = 500 v, t p = 3.1 s, i c = 0.3 a, i b = 0.03 a, l c = 1 mh, srf = 480 khz 137 ns t s inductive storage time 350 ns vt f inductive voltage fall time 120 ns vt r inductive voltage rise time 100 ns t c inductive crossover time 137 ns it f inductive current fall time v gs = 10 v, r g = 47 , v clamp = 500 v, t p = 10 s, i c = 1 a, i b = 0.2 a, l c = 1 mh, srf = 480 khz 35 ns t s inductive storage time 980 ns vt f inductive voltage fall time 30 ns vt r inductive voltage rise time 195 ns t c inductive crossover time 210 ns v csw maximum collector source voltage at turn-off without snubber h fe = 5, i c = 2 a 1250 v i gs(os) gate-source leakage current v gs = 20 v 1.0 na v cs(on) collector-source on voltage v gs = 10 v, i c = 2 a, i b = 0.67 a, h fe = 3 2.210 v v gs = 10 v, i c = 1 a, i b = 0.33 a, h fe = 3 0.321 v v gs = 10 v, i c = 0.5 a, i b = 0.17 a, h fe = 3 0.131 v v gs = 10 v, i c = 0.3 a, i b = 0.06 a, h fe = 5 0.166 v v gs(th) gate threshold voltage v bs = v gs, i b = 250 a 1.9 v c iss input capacitance (v gs = v cb = 0) v cs = 25 v, f = 1 mhz 470 pf q gs(tot) gate-source charge v cb = 0 v gs = 10 v, i c = 8 a, v cs = 25 v 9nc r ds(on) static drain-source on resistance v gs = 10 v, i d = 6.3 a 21 m v gs = 4.5 v, i d = 5.5 a 26 m v gs = 10 v, i d = 6.3 a, t j = 125c 30 m
FJBE2150D ? esbc? rated npn silicon transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJBE2150D rev. 1.0.0 5 typical performan ce characteristics figure 4. static characteris tic figure 5. dc current gain figure 6. collector-emi tter saturation voltage h fe = 3 figure 7. collector-emi tter saturation voltage h fe = 5 figure 8. collector-emi tter saturation voltage h fe = 10 figure 9. collector-emi tter saturation voltage h fe = 20 01234567 0 1 2 3 1a 800ma 900ma 700ma 600ma 500ma 400ma 300ma i b =100ma 200ma i c [a], collector current v ce [v], collector emitter voltage 1 10 100 1000 1 10 100 v ce =10v t a =25 o c t a =125 o c h fe , dc current gain i c [ma], collector current 1e-3 0.01 0.1 1 10 0.01 0.1 1 10 100 t a = 25 o c t a = 125 o c i c = 3 i b t a = - 25 o c v ce (sat) [v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 1 10 100 t a = 125 o c t a = -25 o c t a = 25 o c i c = 5 i b v ce (sat) [v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 1 10 100 t a = 125 o c t a = -25 o c t a = 25 o c i c = 10 i b v ce (sat) [v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 1 10 100 t a = 125 o c t a = -25 o c t a = 25 o c i c = 20 i b v ce (sat) [v], saturation voltage i c [a], collector current
FJBE2150D ? esbc? rated npn silicon transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJBE2150D rev. 1.0.0 6 typical performan ce characteristics (continued) figure 10. typical collector satura tion voltage figure 11. capacitance figure 12. inductive load collector current fall- time (t f ) figure 13. inductive load collector current storage time (t stg ) figure 14. inductive load collector voltage fall- time (t f ) figure 15. inductive load collector voltage rise- time (t r ) 1 10 100 1k 0 1 2 t j =25 o c 2.0a 3.0a 1.0a 0.4a i c =0.2a v ce [v], voltage i b [ma], base current 1 10 100 1000 10000 1 10 100 1000 c ob (emitter open) c ob (emitter grounded) capacitance [pf] collector-base voltage[v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 150 175 200 225 250 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [ns] i c [a], collector current t a = 25 o c l=1mh srf=480khz 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [us] i c [a], collector current t a = 25 o c l=1mh srf=480khz 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 160 180 200 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [ns] i c [a], collector current t a = 25 o c l=1mh srf=480khz 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 60 80 100 120 140 160 180 200 220 240 260 280 300 hfe=10 esbc hfe=5 esbc hfe=10 commom emitter hfe=5 common emitter time [ns] i c [a], collector current t a = 25 o c l=1mh srf=480khz
FJBE2150D ? esbc? rated npn silicon transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJBE2150D rev. 1.0.0 7 typical performan ce characteristics (continued) figure 16. inductive load collector current / voltage crossover (t c ) figure 17. bjt reverse bias safe operating area figure 18. esbc rbsoa figure 19. crossover forward bias safe operating area (fbsoa) figure 20. power derating 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 80 100 120 140 160 180 200 220 240 260 280 300 hfe=10 esbc hfe=5 esbc hfe=10 common emitter hfe=5 common emitter time [ns] i c [a], collector current t a = 25 o c l=1mh srf=480khz 0 200 400 600 800 1000 1200 1400 1600 1800 0 1 2 3 v dd = +/-50v, r load = 500k v be (off) = 5v i c [a], collector current v ce [v], collector-emitter voltage 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 v dd = +/-50v, r load = 500kohms h fe = 4 i c [a], collector current v ce [v], collector-emitter voltage 0 500 1000 1500 2000 0.1 1 10 t c = 25 o c single 80us pulse i c [ma], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 140 p d [w], power dissipation t c [ o c], case temperature
FJBE2150D ? esbc? rated npn silicon transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJBE2150D rev. 1.0.0 8 test circuits figure 23. f t measurement figure 24. fbsoa v ce a }?? st???? p j r\g} k|{ a }?? st???? p j k|{ }?? a p i figure 21. test circuit for inductive load and reverse bias safe operating figure 22. energy rating test circuit
FJBE2150D ? esbc? rated npn silicon transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJBE2150D rev. 1.0.0 9 test circuits (continued) functional test waveforms figure 25. simplified satura ted switch driver circuit figure 26. crossover time measurement figure 27. saturated switching waveform 90% vce 10% vce 90% ic 10% ic
FJBE2150D ? esbc? rated npn silicon transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJBE2150D rev. 1.0.0 10 functional test waveforms (continued) f i g u r e 2 8 . st o r a g e ti m e - c o m m o n e m i t t e r base turn-off (ib2) to i c fall-time f i g u r e 2 9 . s t o r a g e t i m e - e s b c f e t gate (off) to i c fall-time
FJBE2150D ? esbc? rated npn silicon transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJBE2150D rev. 1.0.0 11 very wide input voltage range supply driving esbc switches xy [ z \ ] _ o} }?? v|{ jz mi kl{ z y x x y oxxhnx}t tiyywx\wj{{| xwww?m z\} xwww?m z\} x y z[ \ ^ ` ttz?yy}i yy}? yl ttzkzw^w xu[x[_~z xw?m xww?m y\} mqilyx]wk{t mkj]\\ tw?x]w_i[^xh w]rl[[wh |m[ww^ xu[x[_ zz?m [\w} zz?m [\w} zz?m [\w} [^wr [^wr [^wr [^wr [^wr [^wr x????gy???????gxywro? _~???? ywwtxwww}gkj wuz\hg????? xytx[}???? [}???? y[}gwuzzh q qgt???g?????g??g???????? ttz?xy}j xy}? \l 1 FJBE2150Dtu figure 30. 8 w; secondary-side regula tion: 3 capacitor input; quasi resonant figure 31. v cc derived figure 32. v bias supply derived figure 33. proportional drive
FJBE2150D ? esbc? rated npn silicon transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJBE2150D rev. 1.0.0 12 physical dimensions figure 34. to-263, 2 lead (d2pak) package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not ex pand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconduct or?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ . 10.75 1.05 5.08 3.80 11.60 6.40 6.60 10.67 9.65 1.68 1.00 9.85 8.38 5.08 1.78 1.14 0.99 0.51 1.66 0.25 m a m a 4.83 4.06 1.65 1.14 0.74 0.38 15.34 15.14 2.40 see det a b 8.00 min 4.21 6.19 min c 4.74 0 - 8 0.25 0.25 0.00 2.79 1.78 detail "a" scale 2:1 notes: a. package conforms to jedec to-263 variation ab except where noted. b. all dimensions are in millimeters. c out of jedec standard value. d. dimension and tolerance as per asme y14.5-1994. e. dimensions are exclusive of burrs, mold flash and tie bar protrusions. f. land pattern recommendation basing from ipc7351 g. drawing file name: to263d02rev2 r0.50 gauge plane seating plane 0.10 b land pattern recommendation 12 3 2 1 d2-pak-2l
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